Publications
FY 2018
Journal Papers
*Peer Reviewed Paper
*45 | Z. Jin, M.A. Ihsan, M. Oogane, K. Fujiwara, and Y. Ando, "Serial magnetic tunnel junction based sensors for detecting far-side pits in metallic specimens", Japanese Journal of Applied Physics, 58, 043003, 2019/3/28 |
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*44 | H. Honjo, S. Ikeda, H. Sato, M. Yasuhira, and T. Endoh, "Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction", IEEE Transactions on Magnetics, 55, 7, 3400904, 2019/3/28. |
*43 | S. Miura, T. V. A. Nguyen, Y. Endo, H. Sato, S. Ikeda, K. Nishioka, H. Honjo, and T. Endoh, "Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions", IEEE Transactions on Magnetics, 55, 2019/3/26 |
*42 | D. Suzuki, and T. Hanyu, "Design of a Highly Reliable High-Speed MTJ-Based Lookup Table Circuit Using Fractured Logic-in-Memory Structure", Japanese Journal of Applied Physics, 58, SBBB10 2019/2/25 |
*41 | M. Kohda, T. Okayasu and J. Nitta, “Spin-momentum locked spin manipulation in a two-dimensional Rashba system”, Scientific Reports, 9, 1909, 2019/2/13. |
*40 | H. LI, J. Robertson, "Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices", Scientific Reports , 9, 1867, 2019/2/12. |
*39 | Y. Guo, H. Li, S. J Clark, J. Robertson, "Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators", The Journal of Physical Chemistry C, 123 5562, 2019/2/12. |
*38 | M. Natsui, T. Chiba, and T. Hanyu, "Design of an Energy-Efficient XNOR Gate Based on MTJ-Based Nonvolatile Logic-in-Memory Architecture for Binary Neural Network Hardware", Japanese Journal of Applied Physics, 58, SB, SBBB01, 2019/2/4 |
*37 | T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno, "Reversal of domain wall chirality with ferromagnet thickness in W/(Co)FeB/MgO systems", Applied Physics Letters, 114, 042405, 2019/1/31 |
*36 | S. Ye, and T. Endoh, "Edge effect in the oxidation of three-dimensional nano-structured silicon", Materials Science in Semiconductor Processing, 93, 266-273, 2019/1/18 |
*35 | R. Wang, D. G. Purdie, Y. Fan, F. C.-P. Massabuau, P. Braeuninger-Weimer, O. J. Burton, R. Blume, R. Schloegl, A. Lombardo, R. S. Weatherup, S. Hofmann, "A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals", ACS Nano, 13, 2114, 2019/1/14. |
*34 | Y. Takahashi, Y. Takeuchi, C. Zhang, B. Jinnai, S. Fukami, and H. Ohno, "Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance", Applied Physics Letters, 114, 012410, 2019/1/11 |
*33 | D. Suzuki, T. Oka, and T. Hanyu, "Circuit Optimization Technique of Nonvolatile Logic-In-Memory Based Lookup Table Circuits Using Magnetic Tunnel Junction Devices", Elsevier Microelectronics Journal, 83, 39, 2019/1/1 |
*32 | S. Achilli, N. Manini, G. Onida, T. Shinada, T. Tanii, and E. Prati, "GeVn complexes for silicon-based room-temperature single-atom nanoelectronics", Scientific Report, 8, 18054, 2018/12/21 |
*31 | H. Sato, P. Chureemart, F. Matsukura, R. W. Chantrell, H. Ohno, and R. F. L. Evans, "Temperature-dependent properties of CoFeB/MgO thin films: Experiments versus simulations", Physical Review B, 98, 214428, 2018/12/14 |
*30 | F. Panciera, J. Tersoff , A.D. Gamalski , M. C. Reuter, D. Zakharov, E. A. Stach, S. Hofmann, F.M. Ross, "Surface Crystallization of Liquid Au-Si and Its Impact on Catalysis", Advanced materials, 31, 1806544, 2018/12/5. |
*29 | N. Onizawa, M. Imai, T. Yoneda, and T. Hanyu, "MTJ-Based Asynchronous Circuits for Re-Initialization Free Computing against Power Failures", Microelectronics Journal, 28, 46-61, 2018/12/1 |
*28 | 深見俊輔、大野英男 「限界に迫る極微細高性能磁気トンネル接合素子」 パリティ, 33, 12, 60-63, 2018/11/22 |
*27 | B. Jinnai, H. Sato, S. Fukami, and H. Ohno, "Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires", Applied Physics Letters, 113, 212403, 2018/11/20 |
*26 | S. DuttaGupta, R. Itoh, S. Fukami, and H. Ohno, "Angle dependent magnetoresistance in heterostructures with antiferromagnetic and non-magnetic metals", Applied Physics Letters, 113, 202404, 2018/11/15 |
*25 | T. Endoh, and H. Honjo, "A Recent Progress of Spintronics Devices for Integrated Circuit Applications", J. Low Power Electron. Appl., 8 (4), 44, 2018, 2018/11/13 |
*24 | N. Higashitarumizu, H. Kawamoto, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno, and K. Nagashio, "Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation", Nanoscale, 2018, 10, 22474, 2018/11/7. |
*23 | M. Bersweiler, E. C. I. Enobio, S. Fukami, H. Sato, and H. Ohno, "An effect of capping-layer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/capping-layer structure", Applied Physics Letters, 113, 172401, 2018/10/22 |
*22 | T. Ogasawara, M. Oogane, M. Tsunoda, and Y. Ando, "Effects of annealing temperature on sensing properties of magnetic-tunnel-junction-based sensors with perpendicular synthetic antiferromagnetic Co/Pt pinned layer", Japanese Journal of Applied Physics, 57, 110308, 2018/10/18 |
*21 | Y. Tu, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, and Y. Nagai、 "Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study", Journal of Applied Physics, 124, 155702, 2018/10/17 |
*20 | D. Iizasa, D. Sato, K. Morita, J. Nitta, and M. Kohda, "Robustness of a persistent spin helix against a cubic Dresselhaus field in (001) and (110) oriented two-dimensional electron gases", Physical Review B, 98, 165112, 2018/10/8. |
*19 | S. Fukami, and H. Ohno, "Perspective: Spintronic synapse for artificial neural network", Journal of Applied Physics, 124, 151904, 2018/10/8 |
*18 | 深見俊輔、大野英男 「反強磁性金属を用いたスピン軌道トルク磁化反転」 日本磁気学会誌『まぐね』、13, 5, 223-228, 2018/10/4 |
*17 | M. Niwa, K. Kimura, T. Watanabe, T. Naijou, H. Honjo, S. Ikeda, and T. Endoh, "STEM tomography study on structural features induced by MTJ processing", Applied Physics A (2018), 124:724. 1-8, 2018/10/1 |
*16 | 加藤修治、高橋良和、遠藤哲郎 「BTB用MMCの短所を克服するStar-Light Converterの提案」 電気学会産業応用論文誌、138, 10, 810–816, 2018/10/1 |
*15 | K. Taniguchi, N. Fang, and K. Nagashio, "Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET", Applied Physics Letters, 113, 2018/9/27. |
*14 | W. A. Borders, S. Fukami, and H. Ohno, "Characterization of spin-orbit torque-controlled synapse device for artificial neural network applications", Japanese Journal of Applied Physics, 57, 1002B2, 2018/9/10 |
*13 | N. Fang, and K. Nagashio, "Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule", ACS Applied Materials & Interfaces, 10, 32355, 2018/8/27. |
*12 | T. Uwanno, T. Taniguchi, K. Watanabe, & K. Nagashio, "Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs", ACS Applied Materials & Interfaces, 10, 28780, 2018/8/6. |
*11 | T. Ogasawara, M. Oogane, M. Tsunoda, and Y. Ando, "Large exchange coupling field in perpendicular synthetic antiferromagnetic structures with CoPt alloy", Japanese Journal of Applied Physics, 57, 088004, 2018/7/12 |
*10 | T. Nakano, M. Oogane, and Y. Ando, "Annealing effect on interlayer exchange coupling in perpendicularly magnetized synthetic antiferromagnetic structure based on Co/Pd multilayers with ultrathin Ru spacer", Japanese Journal of Applied Physics, 57, 073001, 2018/6/21. |
*9 | J. He, N. Fang, K. Nakamura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio, "2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+-WSe2 Source", Advanced Electronic Materials. 4, 1800207, 2018/5/31. |
*8 | K. Takagi, T. Ono, "First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface", Japanese Journal of Applied Physics., 57, 066501, 2018/5/16. |
*7 | N. Ichikawa, T. Dohi, A. Okada, H. Sato, S. Fukami, and H. Ohno, "Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis", Applied Physics Letters, 112, 202402, 2018/5/15. |
*6 | Y. Takeuchi, C. Zhang, A. Okada, H. Sato, S. Fukami, and H. Ohno, "Spin-orbit torque in high-resistivity-W/CoFeB/MgO", Applied Physics Letters, 112, 192408, 2018/5/10. |
*5 | M. Piquemal-Banci, R. Galceran, F. Godel, S. Caneva, M.-B. Martin, R. S. Weatherup, P. R. Kidambi, K. Bouzehouane, S. Xavier, A. Anane, F. Petroff, A. Fert, S.M-M. Dubois, J.-C. Charlier, J. Robertson, S. Hofmann, B. Dlubak, P. Seneor, "Insulator-To-Metallic Spin-Filtering In 2D-Magnetic Tunnel Junctions Based On Hexagonal Boron Nitride", ACS Nano, 12, 4712, 2018/4/26. |
*4 | N. Higashitarumizu, H. Kawamoto, K. Ueno and K. Nagashio, "Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application", MRS Advances, 3, 2809, 2018/4/25. |
*3 | A. Okada, S. Kanai, S. Fukami, H. Sato, and H. Ohno, "Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance", Applied Physics Express, 112, 172402, 2018/4/23. |
*2 | H. Kageshima, K. Shiraishi, and T. Endoh, "Reconsideration of Si Pillar Thermal Oxidation Mechanism", Japanese Journal of Applied Physics, 57, 06KD02, 2018/4/13. |
*1 | Y. Yajima, K. Shiraishi, T. Endoh, and H. Kageshima, "Oxygen Concentration Dependence of Silicon Oxide Dynamical Properties", Japanese Journal of Applied Physics, 57, 06KD01, 2018/4/12. |