Tohoku University Center for Innovative Integrated Electoric Systems

Tohoku University

J-Innovation HUB

Publications

FY 2018

Journal Papers

*Peer Reviewed Paper

*45 Z. Jin, M.A. Ihsan, M. Oogane, K. Fujiwara, and Y. Ando,
"Serial magnetic tunnel junction based sensors for detecting far-side pits in metallic specimens",
Japanese Journal of Applied Physics, 58, 043003, 2019/3/28
*44 H. Honjo, S. Ikeda, H. Sato, M. Yasuhira, and T. Endoh,
"Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction",
IEEE Transactions on Magnetics, 55, 7, 3400904, 2019/3/28.
*43 S. Miura, T. V. A. Nguyen, Y. Endo, H. Sato, S. Ikeda, K. Nishioka, H. Honjo, and T. Endoh,
"Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions",
IEEE Transactions on Magnetics, 55, 2019/3/26
*42 D. Suzuki, and T. Hanyu,
"Design of a Highly Reliable High-Speed MTJ-Based Lookup Table Circuit Using Fractured Logic-in-Memory Structure",
Japanese Journal of Applied Physics, 58, SBBB10 2019/2/25
*41 M. Kohda, T. Okayasu and J. Nitta,
“Spin-momentum locked spin manipulation in a two-dimensional Rashba system”,
Scientific Reports, 9, 1909, 2019/2/13.
*40 H. LI, J. Robertson,
"Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices",
Scientific Reports , 9, 1867, 2019/2/12.
*39 Y. Guo, H. Li, S. J Clark, J. Robertson,
"Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators",
The Journal of Physical Chemistry C, 123 5562, 2019/2/12.
*38 M. Natsui, T. Chiba, and T. Hanyu,
"Design of an Energy-Efficient XNOR Gate Based on MTJ-Based Nonvolatile Logic-in-Memory Architecture for Binary Neural Network Hardware",
Japanese Journal of Applied Physics, 58, SB, SBBB01, 2019/2/4
*37 T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno,
"Reversal of domain wall chirality with ferromagnet thickness in W/(Co)FeB/MgO systems",
Applied Physics Letters, 114, 042405, 2019/1/31
*36 S. Ye, and T. Endoh,
"Edge effect in the oxidation of three-dimensional nano-structured silicon",
Materials Science in Semiconductor Processing, 93, 266-273, 2019/1/18
*35 R. Wang, D. G. Purdie, Y. Fan, F. C.-P. Massabuau, P. Braeuninger-Weimer, O. J. Burton, R. Blume, R. Schloegl, A. Lombardo, R. S. Weatherup, S. Hofmann,
"A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals",
ACS Nano, 13, 2114, 2019/1/14.
*34 Y. Takahashi, Y. Takeuchi, C. Zhang, B. Jinnai, S. Fukami, and H. Ohno,
"Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance",
Applied Physics Letters, 114, 012410, 2019/1/11
*33 D. Suzuki, T. Oka, and T. Hanyu,
"Circuit Optimization Technique of Nonvolatile Logic-In-Memory Based Lookup Table Circuits Using Magnetic Tunnel Junction Devices",
Elsevier Microelectronics Journal, 83, 39, 2019/1/1
*32 S. Achilli, N. Manini, G. Onida, T. Shinada, T. Tanii, and E. Prati,
"GeVn complexes for silicon-based room-temperature single-atom nanoelectronics",
Scientific Report, 8, 18054, 2018/12/21
*31 H. Sato, P. Chureemart, F. Matsukura, R. W. Chantrell, H. Ohno,
and R. F. L. Evans,
"Temperature-dependent properties of CoFeB/MgO thin films: Experiments versus simulations",
Physical Review B, 98, 214428, 2018/12/14
*30 F. Panciera, J. Tersoff , A.D. Gamalski , M. C. Reuter, D. Zakharov, E. A. Stach, S. Hofmann, F.M. Ross,
"Surface Crystallization of Liquid Au-Si and Its Impact on Catalysis",
Advanced materials, 31, 1806544, 2018/12/5.
*29 N. Onizawa, M. Imai, T. Yoneda, and T. Hanyu,
"MTJ-Based Asynchronous Circuits for Re-Initialization Free Computing against Power Failures",
Microelectronics Journal, 28, 46-61, 2018/12/1
*28 深見俊輔、大野英男
「限界に迫る極微細高性能磁気トンネル接合素子」
パリティ, 33, 12, 60-63, 2018/11/22
*27 B. Jinnai, H. Sato, S. Fukami, and H. Ohno,
"Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires",
Applied Physics Letters, 113, 212403, 2018/11/20
*26 S. DuttaGupta, R. Itoh, S. Fukami, and H. Ohno,
"Angle dependent magnetoresistance in heterostructures with antiferromagnetic and non-magnetic metals",
Applied Physics Letters, 113, 202404, 2018/11/15
*25 T. Endoh, and H. Honjo,
"A Recent Progress of Spintronics Devices for Integrated Circuit Applications",
J. Low Power Electron. Appl., 8 (4), 44, 2018, 2018/11/13
*24 N. Higashitarumizu, H. Kawamoto, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno, and K. Nagashio,
"Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation",
Nanoscale, 2018, 10, 22474, 2018/11/7.
*23 M. Bersweiler, E. C. I. Enobio, S. Fukami, H. Sato, and H. Ohno,
"An effect of capping-layer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/capping-layer structure",
Applied Physics Letters, 113, 172401, 2018/10/22
*22 T. Ogasawara, M. Oogane, M. Tsunoda, and Y. Ando,
"Effects of annealing temperature on sensing properties of magnetic-tunnel-junction-based sensors with perpendicular synthetic antiferromagnetic Co/Pt pinned layer",
Japanese Journal of Applied Physics, 57, 110308, 2018/10/18
*21 Y. Tu, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, and Y. Nagai、
"Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study",
Journal of Applied Physics, 124, 155702, 2018/10/17
*20 D. Iizasa, D. Sato, K. Morita, J. Nitta, and M. Kohda,
"Robustness of a persistent spin helix against a cubic Dresselhaus field in (001) and (110) oriented two-dimensional electron gases",
Physical Review B, 98, 165112, 2018/10/8.
*19 S. Fukami, and H. Ohno,
"Perspective: Spintronic synapse for artificial neural network",
Journal of Applied Physics, 124, 151904, 2018/10/8
*18 深見俊輔、大野英男
「反強磁性金属を用いたスピン軌道トルク磁化反転」
日本磁気学会誌『まぐね』、13, 5, 223-228, 2018/10/4
*17 M. Niwa, K. Kimura, T. Watanabe, T. Naijou, H. Honjo, S. Ikeda, and T. Endoh,
"STEM tomography study on structural features induced by MTJ processing",
Applied Physics A (2018), 124:724. 1-8, 2018/10/1
*16 加藤修治、高橋良和、遠藤哲郎
「BTB用MMCの短所を克服するStar-Light Converterの提案」
電気学会産業応用論文誌、138, 10, 810–816, 2018/10/1
*15 K. Taniguchi, N. Fang, and K. Nagashio,
"Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET",
Applied Physics Letters, 113, 2018/9/27.
*14 W. A. Borders, S. Fukami, and H. Ohno,
"Characterization of spin-orbit torque-controlled synapse device for artificial neural network applications",
Japanese Journal of Applied Physics, 57, 1002B2, 2018/9/10
*13 N. Fang, and K. Nagashio,
"Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule",
ACS Applied Materials & Interfaces, 10, 32355, 2018/8/27.
*12 T. Uwanno, T. Taniguchi, K. Watanabe, & K. Nagashio,
"Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs", 
ACS Applied Materials & Interfaces, 10, 28780, 2018/8/6.
*11 T. Ogasawara, M. Oogane, M. Tsunoda, and Y. Ando, "Large exchange coupling field in perpendicular synthetic antiferromagnetic structures with CoPt alloy", Japanese Journal of Applied Physics, 57, 088004, 2018/7/12
*10 T. Nakano, M. Oogane, and Y. Ando,
"Annealing effect on interlayer exchange coupling in perpendicularly magnetized synthetic antiferromagnetic structure based on Co/Pd multilayers with ultrathin Ru spacer",
Japanese Journal of Applied Physics, 57, 073001, 2018/6/21.
*9 J. He, N. Fang, K. Nakamura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio,
"2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+-WSe2 Source",
Advanced Electronic Materials. 4, 1800207, 2018/5/31.
*8 K. Takagi, T. Ono,
"First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface",
Japanese Journal of Applied Physics., 57, 066501, 2018/5/16.
*7 N. Ichikawa, T. Dohi, A. Okada, H. Sato, S. Fukami, and H. Ohno,
"Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis",
Applied Physics Letters, 112, 202402, 2018/5/15.
*6 Y. Takeuchi, C. Zhang, A. Okada, H. Sato, S. Fukami, and H. Ohno,
"Spin-orbit torque in high-resistivity-W/CoFeB/MgO",
Applied Physics Letters, 112, 192408, 2018/5/10.
*5 M. Piquemal-Banci, R. Galceran, F. Godel, S. Caneva, M.-B. Martin, R. S. Weatherup, P. R. Kidambi, K. Bouzehouane, S. Xavier, A. Anane, F. Petroff, A. Fert, S.M-M. Dubois, J.-C. Charlier, J. Robertson, S. Hofmann, B. Dlubak, P. Seneor,
"Insulator-To-Metallic Spin-Filtering In 2D-Magnetic Tunnel Junctions Based On Hexagonal Boron Nitride",
ACS Nano, 12, 4712, 2018/4/26.
*4 N. Higashitarumizu, H. Kawamoto, K. Ueno and K. Nagashio,
"Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application",
MRS Advances, 3, 2809, 2018/4/25.
*3 A. Okada, S. Kanai, S. Fukami, H. Sato, and H. Ohno,
"Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance",
Applied Physics Express, 112, 172402, 2018/4/23.
*2 H. Kageshima, K. Shiraishi, and T. Endoh,
"Reconsideration of Si Pillar Thermal Oxidation Mechanism",
Japanese Journal of Applied Physics, 57, 06KD02, 2018/4/13.
*1 Y. Yajima, K. Shiraishi, T. Endoh, and H. Kageshima,
"Oxygen Concentration Dependence of Silicon Oxide Dynamical Properties",
Japanese Journal of Applied Physics, 57, 06KD01, 2018/4/12.