Publications

FY 2016

Journal Papers

*Peer Reviewed Paper

*22	D. Suzuki, M. Natsui, A. Mochizuki, S. Ikeda, T. Endoh, H. Ohno, and T. Hanyu, "Design of a Variation-Resilient Single-Ended Nonvolatile 6-Input Lookup Table Circuit with a Redundant-MTJ-Based Active Load for Smart IoT Applications", IET Electronics Letters, 53, 456-458, 2017/3/30.
*21	A. Okada, S. He, B. Gu, S. Kanai, A. Soumyanarayanan, S. T. Lim, M. Tran, M. Mori, S. Maekawa, F. Matsukura, H. Ohno, and C. Panagopoulos, "Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy", Proceedings of the National Academy of Sciences of the United States of America, PNAS Early Edition, 114, 3815-3820, 2017/3/24.
*20	D. Suzuki and T. Hanyu, "Design of a low-power nonvolatile flip-flop using three-terminal magnetic-tunnel-junction-based self-terminated mechanism", Japanese Journal of Applied Physics, 56, 04CN06, 2017/3/6.
*19	A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, and H. Ohno, "Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures", Applied Physics Letters, 110, 092410, 2017/3/1.
*18	M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu, "Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction", Japanese Journal of Applied Physics, 56, 04CN01, 2017/2/16.
*17	S. DuttaGupta, S. Fukami, B. Kuerbanjiang, H. Sato, F. Matsukura, V. K. Lazarov, and H. Ohno, "Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO", AIP Advances, 7, 055918, 2017/1/1.
*16	H. Honjo, S. Ikeda, H. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, and T. Endoh, "Origin of variation of shift field via annealing at 400℃ in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer", AIP advances, 7, 055913, 2017/1/11.
*15	T. Nakano, M. Oogane, T. Furuichi, and Y. Ando, "Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensor", Applied Physics Letter, 110, 012401, 2017/1/4.
*14	M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance", Applied Physics Express, 10, 013001, 2016/12/1.
*13	C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno, "Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO", Applied Physics Letters, 109, 192405, 2016/11/8.
*12	H. Kageshima, K. Shiraishi, and T. Endoh, "Silicon Emission Mechanism for Oxidation Process of Non-Planar Silicon", ECS Transactions, 75, 215-226, 2016/10/2.
*11	S. Kawachi, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi, "First Principles Study on the Strain Dependence of Thermal Oxidation and Hydrogen Annealing Effect at Si/SiO2 Interface in V-MOSFET", ECS Transactions, 75, 293-299, 2016/10/2.
*10	T. Hanyu, T. Endoh, D. Suzuki, H. Koike, Y. Ma, N. Onizawa, M. Natsui, S. Ikeda, and H. Ohno, "Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing", Proceedings of the IEEE, 104, 1844-1863, 2016/9/7.
*9	T. Nakano, M. Oogane, H.Naganuma, and Y. Ando, "Magnetic Tunnel Junctions with [Co/Pd]-Based Reference Layer and CoFeB Sensing Layer for Magnetic Sensor", IEEE Transaction on Magnetics, 52, 4001304-1-6, 2016/7/2.
*8	H. Honjo, S. Ikeda, H. Sato,S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi,M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno and T. Endoh, "Improvement of thermal tolerance of CoFeB-MgO perpendicular-anisotropy magnetic tunnel junctions by controlling boron composition", IEEE Transaction on Magnetics, 52, 3401104, 2016/7/1.
*7	K. Tsubomi, M. Muraguchi, and T. Endoh, “Novel current collapse mode induced by source leakage current in AlGaN/GaN high-electron mobility transistors and its impact”, Japanese Journal of Applied Physics, 55, 08PD06, 2016/7/1.
*6	K. Watanabe, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, “Magnetic Properties of CoFeB–MgO Stacks With Different Buffer-Layer Materials (Ta or Mo)”, IEEE Transactions on Magnetics, 52, 3400904, 2016/6/22.
*5	S. Ishikawa, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, “Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy”, IEEE Transactions on Magnetics, 52, 3400704, 2016/6/22.
*4	T. Endoh, H. Koike, S. Ikeda, T. Hanyu, H. Ohno "An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories —" IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS), 6, 109-119, 2016/6/9.
*3	S. Sato, K. Yamabe, T. Endoh, and M. Niwa "Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode" Materials Science Forum, 858, 485-488, 2016/5/24.
*2	H. Kageshima, K. Shiraishi, and T. Endoh "Extension of Silicon Emission Model for Silicon Pillar Oxidation" Japanese Journal of Applied Physics, 55, 08PE02-1-5, 2016/5/19.
*1	E.Hirayama, H. Sato, S. Kanai, F. Matsukura, and H.Ohno "Magnetization Reversal by Field and Current Pulses in Elliptic CoFeB/MgO Tunnel Junctions With Perpendicular Easy Axis " IEEE Magnetics Letters, 7, 3104004, 2016/5/12.