Publications
FY 2017
Journal Papers
*Peer Reviewed Paper
| *43 | Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface", ACS Applied Materials & Interfaces, 10, 11732, 2018/3/19. |
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| *42 | K. Itoh, and T. Endoh, "Loss analysis and optimum design of a highly efficient and compact CMOS DC–DC converter with novel transistor layout using 60 nm multipillar-type vertical body channel MOSFET", Japanese Journal of Applied Physics, 57, 4S, 04FR12, 2018/3/16. |
| *41 | E. C. I. Enobio, M. Bersweiler, H. Sato, S. Fukami and H. Ohno, "Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement", Japanese Journal of Applied Physics, 57, 04FN08, 2018/3/13. |
| *40 | M. Shinozaki, J. Igarashi, H. Sato, and H. Ohno, "Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions", Applied Physics Express, 11, 043001, 2018/3/9. |
| *39 | D. Suzuki, and T. Hanyu, "Design of a magnetic-tunnel-junction-oriented nonvolatile lookup table circuit with write-operation-minimized data shifting", Japanese Journal of Applied Physics, 57, 04FE09, 2018/3/9. |
| *38 | K. Watanabe, B. Jinnai, S. Fukami, H. Sato, and H. Ohno, "Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions", Nature Communications, 9, 663, 2018/2/14. |
| *37 | C. Zhang, S. Fukami, S. DuttaGupta, H. Sato, and H. Ohno, "Time and spatial evolution of spin–orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes", Japanese Journal of Applied Physics, 57, 04FN02, 2018/2/7. |
| *36 | D. Perconte, F. A. Cuellar, C. Moreau-Luchaire, M. Piquemal-Banci, R. Galceran, P.-R. Kidambi, M.-B. Martin, S. Hofmann, R. Bernard, B. Dlubak, P. Seneor, and J.-E. Villegas, "Tunable Klein-like tunnelling of high-temperature superconducting pairs into graphene", Nature Physics, 14, 25, 2018/2/1. |
| *35 | R. Enoki, H. Gamou, M. Kohda, and J. Nitta, "Enhancement of spin-orbit interaction of Cu thin films by oxidation treatment", Applied Physics Express, 11, 033001, 2018/1/30. |
| *34 | Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio, "Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement", Physical Review B, 97, 045425, 2018/1/24. |
| *33 | N. Fang, and K. Nagashio, "Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor", Journal of Physics D: Applied Physics, 51, 065110, 2018/1/24. |
| *32 | M. Suzuki, M. Kohda, S. Takasuna, S. Matsuzaka, Y. Sato, T. Tanabe, Y. Oyama, and J. Nitta, "Effect of optical waveguide on photoluminescence polarization in layered material GaSe with millimeter scale", Japanese Journal of Applied Physics, 57, 020308, 2018/1/19. |
| *31 | S. Gupta, S. Kanai, F. Matsukura, and H. Ohno, "Temperature dependence of ferromagnetic resonance spectra of permalloy on (Bi1-xSbx)2Te3", Japanese Journal of Applied Physics, 57, 020302, 2017/12/27. |
| *30 | K. Prasertsuk, T. Tanikawa, T. kimura, S. Kuboya, T. Suemitsu, and T. Matsuoka, "N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching", Applied Physics Express, 11, 015503, 2017/12/27. |
| *29 | E. Fukuda, T. Endoh, T. Ishikawa, K. Izunome, K. Kamijo, and H. Kageshima, "Influence of oxygen concentration of Si wafer surface for Si emission on Nano ordered three-dimensional structure devices", e-Journal of Surface Science and Nanotechnology, 15, 127-134, 2017/12/14. |
| *28 | H. Lu, Y. Guo, and J. Robertson, "Charge transfer doping of graphene without degrading carrier mobility", Japanese Journal of Applied Physics, 121, 224304, 2017/11/10. |
| *27 | S. DuttaGupta, T. Kanemura, C. Zhang, A. Kurenkov, S. Fukami, and H. Ohno, "Spin-orbit torques and Dzyaloshinskii-Moriya interaction in PtMn/[Co/Ni] heterostructures", Applied Physics Letters, 111, 182412, 2017/11/3. |
| *26 | Y. Kunihashi, H. Sanada, Y. Tanaka, H. Gotoh, K. Onomitsu, K. Nakagawara, M. Kohda, and J. Nitta "Drift-Induced Enhancement of Cubic Dresselhaus Spin-Orbit Interaction in a Two-Dimensional Electron Gas", Physical Review Letters, 119, 187703, 2017/10/31. |
| *25 | H. Honjo, S. Ikeda, H. Sato, K. Nishioka, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi,M. Yasuhira, T. Tanigawa, H. Koike, H. Inoue, M. Muraguchi, M. Niwa, H. Ohno, and T. Endoh, "Impact of tungsten sputtering condition on magnetic and transport properties of double-MgO magnetic tunneling junction with CoFeB/W/ CoFeB free layer", IEEE Transactions on magnetics, 53, 1-4, 2017/10/26. |
| *24 | W. A. Borders, S. Fukami, and H. Ohno, "Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device", IEEE MAGNETICS LETTERS, 53, 6000804, 2017/10/24. |
| *23 | M. Bersweiler, H. Sato, and H. Ohno, "Magnetic and Free-Layer Properties of MgO/(Co)FeB/MgO Structures: Dependence on CoFeB Composition", IEEE MAGNETICS LETTERS, 8, 3109003, 2017/10/11. |
| *22 | M.Niwa, S. Sato, and T. Endoh, "Interface Control of Advanced Electronic Devices -High-k/Metal Gate System and Magnetic Tunneling Junction", ECS Transactions, Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar, 80, 133-145, 2017/10/1. |
| *21 | S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta, "Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films", Physical Review B Rapid Communications, 96, 161303, 2017/10/1. |
| *20 | Y. Guo, and J. Robertson, "Band Structure, Band Offsets, Substitutional Doping, and Schottky Barriers in InSe", Physical Review Materials, 1, 044004, 2017/10/1. |
| *19 | J. Igarashi, J. landro, H. Sato, F. Matsukura, and H. Ohno, "Spin-orbit torque induced magnetization switching in Co/Pt multilayers", Applied Physics Letters, 111, 132407, 2017/9/28. |
| *18 | S. Caneva, M.-B. Martin, L. D’Arsie, I. A. Aria, H. Sezen, M. Amati, L. Gregoratti, H. Sugime, S. Esconjauregui, J. Robertson, S. Hofmann, and R. S. Weatherup, " From Growth Surface to Device Interface: Preserving Metallic Fe under Monolayer Hexagonal Boron Nitride", ACS Applyed Materials & Interfaces, 9, 29973, 2017/9/10. |
| *17 | B. Jinnai, C. Zhang, A. Kurenkov, M. Bersweiler, H. Sato, S. Fukami, and H. Ohno, "Spin-orbit torque induced magnetization switching in Co/Pt multilayers", Applied Physics Letters, 111, 102402, 2017/9/7. |
| *16 | S. Gupta, S. Kanai, F. Matsukura, and H. Ohno, "Magnetic and transport properties of Sb2Te3 doped with high concentration of Cr", Applied Physics Express, 10, 103001, 2017/9/5. |
| *15 | S. Kurabayashi, and K. Nagashio, "Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition", Nanoscale, 9, 13264-13271, 2017/8/18. |
| *14 | H. Li, Y. Guo, and J. Robertson, "Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge", Scientific Reports, 7, 16669, 2017/8/5 |
| *13 | F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, Y. Watamura, S. Samukawa, T. Otsuji, and T. Suemitsu, "Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse", Solid State Electronics, 137, 1-5, 2017/8/1. |
| *12 | H. Sato, S. Ikeda, and H. Ohno, "Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm", Japanese Journal of Applied Physics, 56, 0802A6, 2017/7/24. |
| *11 | M. Bersweiler, K. Watanabe, H. Sato, F. Matsukura, and H. Ohno, "Magnetic properties of FeV/MgO-based structures", Applied Physics Express, 10, 083001, 2017/7/13. |
| *10 | M. Kohda, and G. Salis, "Physics and application of persistent spin helix state in semiconductor heterostructures", Semiconductor Science and Technology, 32, 073002, 2017/7/1. |
| *9 | K. Hirose, D. Kobayashi, T. Ito, and T. Endoh, "Memory reliability of spintronic materials and devices for disaster-resilient computing against radiation-induced bit flips on the ground", Japanese Journal of Applied Physics, 56, 0802A5, 2017/6/30. |
| *8 | D. Kobayashi, K. Hirose, T. Makino, S. Onoda, T. Ohshima, S. Ikeda, H. Sato, E. C. I. Enobio, T. Endoh, and H. Ohno, "Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation", Japanese Journal of Applied Physics, 56, 0802B4, 2017/6/22. |
| *7 | S. Zheng, G. Zhong, X. Wu, L. D'Arsiè, and J. Robertson, "Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition", RSC Advances, 7, 33185, 2017/6/10. |
| *6 | Y. Narita, Y. Takahashi, M. Harada, K. Oikawa, D. Kobayashi, K. Hirose, H. Sato, S. Ikeda, T. Endoh, and H. Ohno, "Fast neutron tolerance of the perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm", Japanese Journal of Applied Physics, 56, 0802B3, 2017/6/6. |
| *5 | K. Watanabe, S. Fukami, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno, "Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers", Japanese Journal of Applied Physics, 56, 0802B2, 2017/6/1. |
| *4 | S. Fukami, and H. Ohno, "Magnetization switching schemes for nanoscale three-terminal spintronics devices", Japanese Journal of Applied Physics, 56, 0802A1, 2017/6/1. |
| *3 | K. Nagashio, Y. Hattori, N. Takahashi, T. Taniguchi, K. Watanabe, J. Bao, W. Norimatsu, and M. Kusunoki, "Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator", ECS Transactions, 79, 91-97, 2017/5/1 |
| *2 | S. Sekizaki, M. Osada, and K. Nagashio, "Molecularly-thin Anatase field-effect transistors fabricated through the solid state transformation of titania nanosheets", Nanoscale, 9, 6471–6477, 2017/4/20. |
| *1 | J. J. Bean, M. Saito, S. Fukami, H. Sato, S. Ikeda, H. Ohno, Y. Ikuhara, and K. P. McKenna, "Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices", Scientific Reports, 7, 45594, 2017/4/4. |