Publications
FY 2020
Journal Papers
*Peer Reviewed Paper
| *47 | T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, K. Nagashio, "Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory" ACS nano,2021, 15, 4, 6658–6668,2021/3/25 |
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| *46 | D. Suzuki, T. Oka, and T. Hanyu. "Design of an Energy-Efficient Binarized Convolutional Neural Network Accelerator Using a Nonvolatile Field-Programmable Gate Array with Only-Once-Write Shifting". Japanese Journal of Applied Physics, 60, SBBB07, 2021/3/25 |
| *45 | C. Zhang, Y. Takeuchi, S. Fukami, and H. Ohno. "Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque". Applied Physics Letters, 118, 092406, 2021/3/2 |
| *44 | B. Jinnai, J. Igarashi, K. Watanabe, E. C. I. Enobio, S. Fukami, and H. Ohno. "Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions". Applied Physics Letters, 118, 082404, 2021/2/24 |
| *43 | S.Ye,K.Yamabe,T.Endoh. "Precise Fabrication of Uniform Sub-10-nm-diameter Cylindrical Silicon Nanopillars via Oxidation Control". Scripta Materialia, 198, 113818, 2021/2/20 |
| *42 | S. Achilli, N.H. Le, G. Fratesi, N. Manini, G. Onida, M. Turchetti, G. Ferri, T. Shinada, and E. Prati "Position-Contarilled Functionalization of Vacancies in Silicon by Single-Ion Implanted Germanium Atoms". ADAVNCES FUNCTIONAL MATERIALS, 2011175, 2021/2/19 |
| *41 | K. Nishioka, H. Honjo, H. Naganuma, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, and T. Endoh. "Enhancement of magnetic coupling and magnetic anisotropy in MTJ with multiple CoFeB/MgO interfaces for high thermal stability". AIP Advances, 11, 025231, 2021/2/12 |
| *40 | H. Shen, Y. Ma, and T. Endoh. "Highly accurate and efficient cluster validation index engine using global separation and local dispersion architecture for adaptive image clustering systems". Jpn. J. Appl. Phys, 60, SBBL02, 2021/2/10 |
| *39 | M. Natsui, G. Yamagishi, and T. Hanyu. "Design of a Highly Reliable Nonvolatile Flip-Flop Incorporating a Common-Mode Write Error Detection Capability". Japanese Journal of Applied Physics, 60, SBBB02, 2021/2/9 |
| *38 | Y. Saito, N. Tezuka, S. Ikeda, and T. Endoh. "W thickness dependence of spin Hall effect for (W/Hf)-multilayer electrode/CoFeB/MgO systems with flat and highly (100) oriented MgO layer". AIP Advances, 11, 025007, 2021/2/4 |
| *37 | H. Honjo, H. Naganuma, T. V. A. Nguyen, H. Inoue, M. Yasuhira, S. Ikeda, and T. Endoh. "Effect of surface modification treatment on top pinned MTJ with perpendicular easy axis". AIP Advances, 11, 025211, 2021/2/3 |
| *36 | Z. Jin, Thomas Myeongseok Koo, Myeong Soo Kim, M. Al-Mahdawi, M. Oogane, Y. Ando, Young Keun Kim, "Highly-sensitive magnetic sensor for detecting magnetic nanoparticles based onmagnetic tunnel junctions at a low static field", AIP Advance, 11, 015046, 2021/1/28. |
| *35 | T. Ichinose, H. Naganuma, "Magnetic and ferroelectric properties of oxygen octahedron/tetrahedron mixed ultrathin multiferroic layer by oxygen desorption", Journal of Applied Physics, 129, 034101, 2021/1/15. |
| *34 | J. Igarashi, B. Jinnai, V. Desbuis, S. Mangin, S. Fukami, and H. Ohno, "Temperature dependence of the energy barrier in X/1X-nm shape-anisotropy magnetic tunnel junctions", Applied Physics Letters, 118, 012409, 2021/1/8. |
| *33 | R. Arakawa, N. Onizawa, J.-P. Diguet, and T. Hanyu, "Multi-Context TCAM-Based Selective Computing: Design Space Exploration for a Low-Power NN", IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, no. 1, pp. 67-76, 2021/1/1. |
| *32 | 田村亮，渡辺直良，佐藤茂之，小池洋紀，池田正二，遠藤哲郎 「STT-MRAMテストのための新しい磁場印加メモリ・テスト・システム」 Probo, Advantest Technical Report 2020, No, 55 pp.18-23, 2020/12/18 |
| *31 | M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, and T. Hanyu, "Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition." IEEE Journal of Solid-State Circuits, 56,1116, 2020/12/9 |
| *30 | M. Shinozaki, T. Dohi, J. Igarashi, J. Llandro, S. Fukami, H. Sato, and H. Ohno, "Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance", Applied Physics Letters, 117, 202404, 2020/11/17. |
| *29 | H. Koike, T. Tanigawa, T. Watanabe, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Yoshiduka, Y. Ma, H. Honjo, K. Nishioka, S. Miura, H. Inoue, S. Ikeda, T. Endoh, "40-nm 1T-1MTJ 128Mb STT-MRAM with Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design", IEEE Transactions on Magnetics, 57,3400909, 2020/11/16. |
| *28 | H. Kawamoto, N. Higashitarumizu, N. Nagamura, M. Nakamura, K. Shimamura, N. Ohashi, and K. Nagashio, "Micrometer-scale monolayer SnS growth by physicalvapor deposition", nanoscale, 12, 23274, 2020/11/16. |
| *27 | K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe and K. Nagashio, "All 2D heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality", ACS Applied Materials & Interfaces, 12, 51598, 2020/11/4. |
| *26 | T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio, "Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage", small, 16, 2004907, 2020/11/3. |
| *25 | 長汐晃輔 「2次元層状ヘテロFETにおける界面特性制御」 応用物理, 89, 139, 2020/10/28 |
| *24 | G. K. Krishnaswamy, A. Kurenkov, G. Sala, M. Baumgartner, V. Krizakova, C. Nistor, F. Maccherozzi, S. S. Dhesi, S. Fukami, H. Ohno, and P. Gambardella, "Multidomain Memristive Switching of Pt38Mn62/[Co/Ni]n Multilayers", Physical Review Applied, 14, 044036, 2020/10/20. |
| *23 | Z. Jin, Y. Wang, K. Fujiwara , M. Oogane and Y. Ando, "Detection of Small Magnetic Fields Using Serial Magnetic Tunnel Junctions with Various Geometrical Characteristics", Sensors, 20, 5704, 2020/10/7. |
| *22 | S. Miura, K. Nishioka, H. Naganuma, T. V. A. Nguyen, H. Honjo, S. Ikeda, T. Watanabe, H. Inoue, M. Niwa, T. Tanigawa, Y. Noguchi, T. Yoshizuka, M. Yasuhira, and T. Endoh, "Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 1011", IEEE Transactions on Electron Devices, 67,5368, 2020/10/05. |
| *21 | K. Ishibashi, S. Iihama, Y. Takeuchi, K. Furuya, S. Kanai, S. Fukami, and S. Mizukami, "All‐optical probe of magnetization precession modulated by spin–orbit torque", Applied Physics Letters, 117, 122403, 2020/9/21. |
| *20 | Kosuke Nagashio, "Understanding interface properties in 2D heterostructure FETs", Semicond. Sci. Technol. 35, 103003. 2020/9/7. |
| *19 | T. Li, Y. Ma, and T. Endoh, "A Systematic Study of Tiny YOLO3 Inference:Toward Compact Brainware Processor With Less Memory and Logic Gate", IEEE Access, 8, 142931, 2020/8/3. |
| *18 | Attayeb Mohsen, Muftah Al-Mahdawi, Mostafa M. Fouda, Mikihiko Oogane, Yasuo Ando, and Zubair Md Fadlullah, "AI Aided Noise Processing of Spintronic Based IoT Sensor for Magnetocardiography Application", ICC 2020 - 2020 IEEE International Conference on Communications (ICC), p. 1, 2020/7/27. |
| *17 | M. Niwa, K. Kimura, T. Naijo, A. Oshurahunov, S. Nagamachi, H. Inoue, H. Honjo, S. Ikeda, and T. Endoh, "Structural Analysis of CoFeB/MgO-based Perpendicular MTJs with Junction Size of 20 nm by STEM Tomography", IEEE Transactions on Magnetics, 57,4400107, 2020/7/10. |
| *16 | K. V. De Zoysa, S. DuttaGupta, R. Itoh, Y. Takeuchi, H. Ohno, and S. Fukami, "Composition dependence of spin−orbit torque in Pt1−xMnx/CoFeB heterostructures", Applied Physics Letters, 117, 012402, 2020/7/6. |
| *15 | H. Naganuma, H. Sato, S. Ikeda, T. Endoh, "Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions", AIP Advances, 10, 075106, 2020/7/2. |
| *14 | A. Kurenkov, S. Fukami, and H. Ohno, "Neuromorphic computing with antiferromagnetic spintronics", Journal of Applied Physics, 128, 010902, 2020/7/1 |
| *13 | I.-T. Bae, S. Yasui, T. Ichinose, M. Itoh, T. Shiraishi, T. Kiguchi, and H. Naganuma, "Growth mechanism and domain structure study on epitaxial BiFeO3 film grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3", Journal of Applied Physics, 127, 245303, 2020/6/25. |
| *12 | H. Honjo, M. Niwa, K. Nishioka, T. V. A. Nguyen, H. Naganuma, Y. Endo, M. Yasuhira, S. Ikeda, and T. Endoh "Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs with Double CoFeB/MgO InterfaceI", IEEE Transactions on Magnetics, 56, 6703504, 2020/6/24. |
| *11 | M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka,Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, and T. Hanyu, "Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage", 2020 IEEE Symposium on VLSI Circuits, Proceedings, 2020/6/16-19. |
| *10 | Ryan Thompson, Jeongchun Ryu, Ye Du, Shutaro Karube, Makoto Kohda, and Junsaku Nitta, "Current direction dependent spin Hall magnetoresistance in epitaxial Pt/Co bilayers on MgO(110)", Phys. Rev. B, 101, 214415, 2020/6/8 |
| *9 | Daniel Steil, Jakob Walowski, Felicitas Gerhard, Tobias Kiessling, Daniel Ebke, Andy Thomas, Takahide Kubota, Mikihiko Oogane, Yasuo Ando, Johannes Otto, Andreas Mann, Moritz Hofherr, Peter Elliott, John Kay Dewhurst, Günter Reiss, Laurens Molenkamp, Martin Aeschlimann, Mirko Cinchetti, Markus Münzenberg, Sangeeta Sharma, and Stefan Mathias, "Efficiency of ultrafast optically induced spin transfer in Heusler compounds", Physical Review Research, 2, 023199, 2020/5/20. |
| *8 | N. Higashitarumizu, H. Kawamoto, C.-J. Lee, B. -H. Lin, F. -H. Chu, I. Yonemori, T.i Nishimura, K. Wakabayashi, W. -H. Chang and K. Nagashio, "Purely in-plane ferroelectricity in monolayer SnS at room temperature", Nature commun. 11, 2428, 2020/5/15. |
| *7 | Ye Du, Hiromu Gamou, Saburo Takahashi, Shutaro Karube, Makoto Kohda, and Junsaku Nitta, "Disentanglement of Spin-Orbit Torques in Pt/Co Bilayers with the Presence of Spin Hall Effect and Rashba-Edelstein Effect", Phys. Rev. Applied, 13, 054014, 2020/5/6. |
| *6 | M. Niwa, H. Honjo, L. S. R. Kumara, H. Inoue, S. Ikeda, H. Tajiri, and T. Endoh, "Effect of metallic Mg insertion in CoFeB/MgO interface perpendicular magnetic tunnel junction on tunnel magnetoresistance ratio observed by Synchrotron x-ray diffraction", Journal of Vacuum Science & Technology B, 38, 033801, 2020/5/4. |
| *5 | Sina Ranjbar, Muftah Al-Mahdawi, Mikihiko Oogane, and Yasuo Ando "High-Temperature Magnetic Tunnnel Junction Magnetometers Based on L10-PtMn Pinned Layer", IEEE Sensors Letters, 4, 2500504, 2020/4/30. |
| *4 | H. Naganuma, V. Zatko, M. Galbiati, F. Godel, A. Sander, C. Carrétéro, O. Bezencenet, N. Reyren, M.-B. Martin, B. Dlubak, and P. Seneor, "A perpendicular graphene/ferromagnet electrode for spintronics", Applied Physics Letters, 116, 173101, 2020/4/27. |
| *3 | M. Natsui, T. Chiba, and T. Hanyu, "Impact of MTJ-Based Nonvolatile Circuit Techniques for Energy-Efficient Binary Neural Network Hardware", Japanese Journal of Applied Physics, 59, 050602, 2020/4/20. |
| *2 | B. Jinnai, K. Watanabe, S. Fukami, and H. Ohno, "magnetic tunnel junction down to single-digit nanometers—Challenges and prospects", Applied Physics Letters, 116, 160501, 2020/4/20. |
| *1 | 羽生貴弘 「不発性ロジックで拓くエッジAIハードウェアの展望」 電子情報通信学会 基礎・境界ソサイエティ Fundamental Review、13、269-276、2020/4/1. |