論文など
2021年度
論文
*査読あり
| *34 | D. Suzuki, T. Oka, and T. Hanyu, "Design of an Active-Load-Localized Single-Ended Nonvolatile Lookup-Table Circuit for Energy-Efficient Binary-Convolutional-Neural-Network Accelerator", Japanese Journal of Applied Physics,vol.61, no.SC, pp.1083-1~1083-10,2022/3/30 |
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| *33 | T. V. A. Nguyen, Y. Saito, H. Naganuma, S. Ikeda, T. Endoh, and Y. Endo、 "Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields", AIP Advances,12, 3, 035133,2022/3/15 |
| *32 | H. Naganuma, M. Nishijima, H. Adachi, M. Uemoto, H. Shinya, S. Yasui, H. Morioka, A. Hirata, F. Godel, Marie-Blandine Martin, B. Dlubak, P. Seneor, and K. Amemiya, "Unveiling a Chemisorbed Crystallographically Heterogeneous Graphene/L10‑FePd Interface with a Robust and Perpendicular Orbital Moment", ACS Nano,16, 4139-4151,2022/2/28 |
| *31 | L. Yu, S. Karube Min Li, M. Tsunoda, M. Oogane, and Y. Ando, "Observation of unconventional spin-polarization induced spin–orbit torque in L12-ordered antiferromagnetic Mn3 Pt thin films", Applied Physics Express,15,2022/2/25 |
| *30 | Y. Saito, S. Ikeda and T. Endoh, "Enhancement of current to spin-current conversion and spin torque efficiencies in a synthetic antiferromagnetic layer based on a Pt/Ir/Pt spacer layer", PHYSICAL REVIEWB,105, 054421-1/11,2022/2/22 |
| *29 | H. Honjo, H. Naganuma, K. Nishioka, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, and T. Endoh, "Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer", IEEE Transactions on Magnetics,58,1400365,2022/2/17 |
| *28 | F. Zhong, M. Natsui, and T. Hanyu, "Dynamic Activation of Power-Gating-Switch Configuration for Highly Reliable Nonvolatile Large-Scale Integrated Circuits", JJAP,Vol. 61, No. SC, pp. 1035-1-1035-10,2022/2/15 |
| *27 | Y. Takeuchi, R. Okuda, J. Igarashi, B. Jinnai, T. Saino, S. Ikeda, S. Fukami, and H. Ohno, "Nanometer-thin L10-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties", Applied Physics Letters,vol. 120, 052404,2022/2/2 |
| *26 | G. Choi, J. Ryu, R. Thompson, Jong-Guk Choi, J. Jeong, S. Lee, Min-Gu Kang, M. Kohda, J. Nitta, and Byong-Guk Park, "Thickness dependence of spin–orbit torques in Pt/Co structures on epitaxial substrates", APL Materials,10,2022/1/13 |
| *25 | M. Kammermeier, T. Saito, D. Iizasa, U. Zülicke, and M. Kohda, "Reliable modeling of weak antilocalization for accurate spin-lifetime extraction", PHYSICAL REVIEW B,104,2021/12/23 |
| *24 | K. Prasertsuk, T. Suemitsu, and T. Matsuoka, "Reverse bias annealing effects in N-polar GaN/AlGaN metal-insulator-semiconductor high electron mobility transistors", Japanese Journal of Applied Physics,61,SA1006(2022), 2021/12/15 |
| *23 | Y. Takeuchi, E. C. I. Enobio, B. Jinnai, H. Sato, S. Fukami, and H. Ohno, "Temperature dependence of intrinsic critical current in perpendicular easy axis CoFeB/MgO magnetic tunnel junctions", Applied Physics Letters, 119, 242403(1)-(5) (2021).2021/12/13 |
| *22 | M. Umeda, N. Higashitarumizu, R. Kitaura, T. Nishimura, K. Nagashio, "Identification of the position of piezoelectric polarization at the MoS2/metal interface", Applied Physics Express,2021, 14, 125002.,2021/12/3 |
| *21 | M. Oogane, K. Fujiwara, A. Kanno, T. Nakano, H. Wagatsuma, T. Arimoto, S. Mizukami, S. Kumagai, H. Matsuzaki, N. Nakasato, and Y. Ando, "Sub-pT magnetic field detection by tunnel magneto-resistive sensors", Applied Physics Express,14, 123002,2021/11/22 |
| *20 | W. Nishiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio, "Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe2 from Electrical Transport Properties", Advanced Functional Materials,'2022, 32, 2108061.,2021/11/17 |
| *19 | T. Ichinose, D. Miura, H. Naganuma, "High-Quality Sputtered BiFeO3 for Ultrathin Epitaxial Films", ACS Applied Electronic Materials,2021,3,11,4836-4848,2021/11/8 |
| *18 | Y.Saito, S.Ikeda, and T.Endoh, "Synthetic antiferromagnetic layer based on Pt/Ru/Pt spacer layer with 1.05 nm interlayer exchange oscillation period for spin–orbit torque devices", Applied Physics Letters, 119, 142401(2021),(1-7),2021/10/4 |
| *17 | D.Suzuki, T.Oka, A.Tamakoshi, Y.Takako, and T.Hanyu, "Design framework for an energy-efficient binary convolutional neural network accelerator based on nonvolatile logic", Nonlinear Theory and Its Applications (NOLTA), IEICE,Vol.E12-N,No.4,pp.695--710,Oct. 2021,2021/10/1 |
| *16 | Y. -R. Chang, T. Nishimura, K. Nagashio, "Thermodynamic perspective on the oxidation of layered materials and surface oxide amelioration in 2D devices", ACS Applied Materials Interfaces,2021, 13, 43282−43289.,2021/9/3 |
| *15 | T. Li, Y. Ma, K. Yoshikawa, O. Nomura and T. Endoh, "Energy-efficient Convolution Module with Flexible Bit-adjustment Method and ADC Multiplier Architecture for Industrial IoT", IEEE Transactions on Industrial Informatics, 18, 5, 3055-3065, 2021/8/19 |
| *14 | Y.Saito, N.Tezuka,S.Ikeda,T.Endoh, "Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers", PHYSICAL REVIEW B,104, 064439,(1)-(11) 2021/8/23 |
| *13 | Y. Sato, T. Nishimura, D. Duanfei, K. Ueno, K. Shinokita, K. Matsuda and K. Nagashio, "Intrinsic Electronic Transport Properties and Carrier Densities in PtS2 and SnSe2: Exploration of n+-Source for 2D Tunnel FETs", ADVANCED ELECTRONIC MATERIALS,2021,2100292,(1-8),2021/8/5 |
| *12 | H. Lu, J. Robertson, and H. Naganuma, "Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe,Co magnetic tunnel junctions", Applied Physics Reviews,8, 031307,(1-15) 2021/8/5 |
| *11 | D.Suzuki and T.Hanyu, “Nonvolatile Field-Programmable Gate Array Using a Standard-Cell-Based Design Flow”, IEICE Transactions on Information and Systems, vol. E104-D, no. 8, pp. 1111-1120, 2021/8/1 |
| *10 | S.Ye,K.Yamabe,T.Endoh, "Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits", Materials Science in Semiconductor Processing, 134, 106046 (1-10) 2021/7/1 |
| *9 | T. Dohi, S. Fukami, and H. Ohno, "Influence of domain wall anisotropy on the current-induced hysteresis loop shift for quantification of the Dzyaloshinskii-Moriya interaction ", Physical Review, B 103, 214450(1)-(9) (2021), 2021/6/29 |
| *8 | K. Nishioka, S. Miura, H. Honjo, H. Naganuma, T. V. A. Nguyen, T. Watanabe, S. Ikeda, and T. Endoh, "Effect of Magnetic Coupling Between Two CoFeB Layers onThermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer". IEEE Transactions on Magnetics, 58, 2, 4400406 (1-6), 2021/5/27 |
| *7 | R. Sharma, R. Mishra, T. Ngo, Y. Guo, S. Fukami, H. Sato, H. Ohno, and H. Yang, "Electrically connected spin-torque oscillators array for 2.4 GHz WiFi band transmission and energy harvesting". Nature Communications, 12, 2924, 1-10, 2021/5/18 |
| *6 | H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, Y. Noguchi, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, and T. Endoh, "Perpendicular Magnetic Tunnel Junctions with Four Anti-ferromagnetically Coupled Co/Pt Pinning Layers". IEEE Transactions on Magnetics, 58, 2, 4400105(1-5), 2021/5/12 |
| *5 | T. Nishimura, T. Kojima, K. Nagashio, M. Niwa, "Ion conductive character of low-yttria-content yttria-stabilized zirconia at low temperature" Japanese Journal of Applied Physics,60, SB, SBBF03(1-7),2021/5/1 |
| *4 | 高橋 良和, 遠藤 哲郎 最新パワーデバイスとパワエレ集積化技術 エレクトロニクス実装学会, 24 No.3 p. 215-225, 2021/5/1 |
| *3 | S.Ye, K.Yamabe and T.Endoh, "Oxidation Rate of Silicon Nanopillars". The Journal of Physical Chemistry C, 125, 8853-8861, 2021/4/20 |
| *2 | S. Akamatsu, M. Oogane, Z. Jin, M. Tsunoda and Y. Ando, "Tunnel magnetoresistance in magnetictunnel junctions with FeAlSi electrode". AIP Advances, 11, 045027, 2021/4/18 |
| *1 | K. Nishioka, S. Miura, H. Honjo, H. Inoue, T. Watanabe, T. Nasuno, H. Naganuma, T. V. A. Nguyen, Y. Noguchi, M. Yasuhira, S. Ikeda, and T. Endoh, ”First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM”. IEEE Transactions on Electron Devices, 68, 6, 2680-2685, 2021/4/14 |