Publications

FY 2014

Conferences

International conference

31	A. Mochizuki, H. Shirahama, N. Onizawa, and T. Hanyu, “Highly Reliable Single-Ended Current-Mode Circuit for an Inter-Chip Asynchronous Communication Link”, IEEE Asia Pacific Conference on Circuits and Systems, Ishigaki, Okinawa, Japan, November 20, 2014.
30	D. Suzuki, “and Takahiro Hanyu" MTJ-Based Low-Energy Nonvolatile Flip-Flop Using Area-Efficient Self-Terminated Write Driver”, The 59th Annual Magnetism and Magnetic Materials (MMM) Conference, Honolulu, Hawaii, USA, November 7, 2014.
29	S. Fukami, H. Sato, M. Yamanouchi, F. Matsukura, and H. Ohno, “Device size dependence of magnetization reversal by spin-orbit torque in Ta/CoFeB/MgO structure down to sub 100 nm”, The 59th Annual Magnetism and Magnetic Materials (MMM) Conference, Honolulu, Hawaii, USA, November 6, 2014.
28	H. Sato, E.C.I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, “Intrinsic critical current and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 11 nm”, The 59th Annual Magnetism and Magnetic Materials (MMM) Conference, Honolulu, Hawaii, USA, November 6, 2014.
27	S. DuttaGupta, S. Fukami, M. Yamanouchi, C. Zhang, H. Sato, F. Matsukura, and H. Ohno, “Domain wall creep in Ta/CoFeB/MgO wire induced by current or field”, The 59th Annual Magnetism and Magnetic Materials (MMM) Conference, Honolulu, Hawaii, USA, November 5, 2014.
26	T. Nakano, M. Oogane, H. Naganuma, T. Yano, K. Ao and　Y. Ando, “Al-Doping Effect on Annealing Stability in MgO-Based Magnetic Tunnel Junctions for Magnetic Sensor with Perpendicularly Magnetized CoFeB Sensing Layer”, The 59th Annual Magnetism and Magnetic Materials (MMM) Conference, Honolulu, Hawaii, USA, November 5, 2014.
25	S. Ohuchida, K. Ito, M. Muraguchi and T. Endoh, “The dynamic interaction effect due to oscillatory stray field from programing cell in 10nm design p-MTJ array”, The 59th Annual Magnetism and Magnetic Materials (MMM) Conference, Honolulu, Hawaii, USA, November 3-7, 2014.
24	D. Suzuki and T. Hanyu, “A Nonvolatile FPGA Using MTJ-Based Logic-in-Memory Structure for Ultra Low-Power Reconfigurable Systems”, 2014 International Workshop on Electronics and Communications (WEC2014), Chengdu, China, October 27, 2014.
23	K. Ito, S. Ohuchida, and T. Endoh, “LLG Micromagnetic Simulation on STT Efficiency of sub 30nm Perpendicular MTJs with etching damage”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 11, 2014.
22	H. Koike, T. Ohsawa, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, “A power-gated 32bit MPU with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 11, 2014.
21	S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, H. Koike, S. Ikeda, T. Endoh, and H. Ohno, “Properties of Perpendicular Anisotropy Magnetic Tunnel Junctions Fabricated over The Cu Via”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 11, 2014.
20	S. Ohuchida, K. Ito and T. Endoh, “Impact of Sub-Volume Excitation for Improving Overdrive Delay Product in Sub-40nm p-MTJ and Its Beyond”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 11, 2014,
19	T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh, “A 500ps/8.5ns ArrayRead/Write Latency 1Mb Twin 1T1MTJ STTMRAM designed in 90nm CMOS/40nm MTJ Process with Novel Positive Feedback S/A Circuit”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 11, 2014.
18	T. Imamoto and T. Endoh, “Ultra Low-Frequency Noise in Vertical MOSFETs Having Tunable Threshold Voltage Fabricated with 60 nm CMOS Technology on 300 mm Wafer Process”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 11, 2014.
17	D. Suzuki and T. Hanyu, “Nonvolatile FPGA Using 2T-1MTJ-Cell-Based Multi-Context Array for Power and Area Efficient Dynamically Reconfigurable Logic”, International Conference of Solid State Devices and Materials 2014(SSDM2014), Tsukuba, Japan, September 11, 2014.
16	S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, H. Koike, S. Ikeda, T. Endoh and H. Ohno, “Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 11, 2014.
15	S. Tanoi and T. Endoh, “A-High frequency Level-up shifter Based on 0.18um Vertical MOSFETs with More than 70% Reduction of Overshoot-voltage Above VDD”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 10, 2014.
14	T. Nakano, M. Oogane, H. Naganuma,T. Yano, K. Ao, and Y. Ando, “Magnetic Sensors Based on MgO-Magnetic Tunnel Junctions with Perpendicularly Magnetized CoFeB-Sensing Layers”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 9, 2014.
13	E. Hirayama, S. Kanai, K. Sato, M. Yamanouchi, H. Sato, S. Ikeda, F. Matsukura and H. Ohno, “In-plane Anisotropy of a CoFeB-MgO Magnetic Tunnel Junction with Perpendicular Magnetic Easy Axis”, International Conference of Solid State Devices and Materials 2014 (SSDM2014), Tsukuba, Japan, September 8, 2014.
12	S. Kanai, H. Sato, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura,　and H. Ohno, “Magnetization switching in a CoFeB/MgO magnetic tunnel junction by the application of two successive voltage pulses”, 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, DC, USA, July 28, 2014.
11	T. Endoh, “STT-MRAM Technology and Its NV-Logic Applications for Ultimate Power Management”, CMOS Emerging Technologies Research, Grenoble, France, July 8, 2014.
10	Y. Toda, Y. Shiokawa, M. Al-Mahdawi, K. Sakamoto and M. Sahashi, “High frequency microwave oscillation of scissors-type mode with NCMR trilayer device under low applied magnetic field”, The 59th Annual Magnetism and Magnetic Materials (MMM) Conference, Department of Electronic Engineering, Tohoku University, Japan, June 26, 2014.
9	Y. Horikawa, S. Ishikawa, S. Ikeda, H. Sato, S. Fukami, M. Yamanouchi, F. Matsukura, and H. Ohno, “MgO cap thickness dependence of interfacial anisotropy of MgO/FeB/MgO structure”, 12th RIEC International Workshop on Spintronics, Sendai, Japan, June 26, 2014.
8	Y. Takeuchi, S. Ishikawa, H. Sato, S. Ikeda, M. Yamanouchi, S. Fukami, F. Matsukura, and H. Ohno , “Temperature dependence of thermal stability of CoFeB-MgO perpendicular easy-axis magnetic tunnel junction”, 12th RIEC International Workshop on Spintronics, Sendai, Japan, June 26, 2014.
7	S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, “High thermal stability of magnetic tunnel junction with CoFeB/Ta/[Co/Pt] multilayer ferromagnetic electrode”, 12th RIEC International Workshop on Spintronics, Sendai, Japan, June 26, 2014.
6	C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno, “In-plane current-induced effective fields and magnetization switching in Ta/CoFeB/MgO structures”, 12th RIEC International Workshop on Spintronics, Sendai, Japan, June 26, 2014.
5	S. DuttaGupta, S. Fukami, M. Yamanouchi, C. Zhang, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno , “Current and field induced domain wall creep in Ta/CoFeB/MgO wire”, 12th RIEC International Workshop on Spintronics, Sendai, Japan, June 26, 2014.
4	T, Nakano, M, Oogane, H, Naganuma, and Y, Ando, “Dependence of Magnetic Sensor Properties on CoFeB Sensing Layer Thickness and Annealing Temperature in MgO-Magntic Tunnel Junctions”, 12th RIEC International Workshop on Spintronics, Sendai, Japan, June 26, 2014.
3	Y. Komatsu, M. Hariyama, M. Kameyama, “An Asynchronous High-Performance FPGA Based on LEDR/Four-Phase-Dual-Rail Hybrid Architecture”, HEART2014, Sendai, Japan, June 10, 2014.
2	H. Honjo, S. Fukami, K. Ishihara, K. Kinoshita, Y. Tsuji, A. Morioka, R. Nebashi, K. Tokutome, N. Sakimura, M. Murahata, S. Miura, T. Sugibayashi, N. Kasai and H. Ohno, “Material stack design with high tolerance to process induced damage in domain wall motion device”, IEEE International Magnetics Conference 2014 (Intermag 2014), Dresden, Germany, May 5, 2014.
1	K. Ito, S. Ohuchida, and T. Endoh, “Dependence of Sub-volume Excitation on Structural and Material Parameters in Precessional Regime of Spin Transfer Torque Magnetization Reversal”, IEEE International Magnetics Conference 2014 (Intermag 2013), Dresden, Germany, May 5, 2014.