Tohoku University Center for Innovative Integrated Electoric Systems

Tohoku University

J-Innovation HUB

Publications

FY 2016

Conferences

International conference

54 M. Natsui, N. Sugaya, and T.Hanyu,
"Brain-Inspired Computing for Error-Resilient VLSI System",
The 4th International Symposium on Brainware LSI, p. 2, Sendai, Japan, Feburuary 24, 2017.
53 J. Igarashi, E. C. I. Enobio, J. Llandro, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"Magnetic field angle dependence of switching field in perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions at various temperatures",
International School on Spintronics and Spin-Orbitronics, Fukuoka Recent Hotel, Japan, December 16, 2016.
52 M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno,
"Junction size dependence of damping constants of CoFeB in magnetic tunnel junctions",
International School on Spintronics and Spin-Orbitronics, Fukuoka Recent Hotel, Japan, December 16, 2016.
51 H. Honjo, S. Ikeda, H. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, and T. Endoh,
"High thermal tolerance synthetic ferrimagnetic reference layer with developed buffer layer for perpendicular anisotropy magnetic tunnel junctions",
IEEE International Electron Devices Meeting (IEDM2016), San Francisco, USA, December 6, 2016.
50 H. Honjo, S. Ikeda, H. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, and T. Endoh,
"Thermally robust double CoFeB-MgO interface magnetic tunnel junction with perpendicular easy axis",
IEEE International Electron Devices Meeting (IEDM2016), San Francisco, USA, December 6, 2016.
49 Y. Tu, B. Han, Y. Shimizu, K. Inoue, M. Yano, Y. China, T. Tanii, T. Shinada, and Y. Nagai,
"Direct Observation of Single Ion Implanted Dopants Distribution in Silicon by Atom Probe Tomography",
2016 MRS Fall Meeting, Boston, Massachusetts, USA, November 29, 2016.
48 S. Kawachi, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi,
"Face orientation dependency on thermal oxidation and hydrogen annealing at the Si/SiO2 Interface for the three-dimensional devices",
7th International Symposium on Advanced Science and Technology of Silicon Materials, Hawaii, USA, November 24, 2016.
47 S. DuttaGupta, S. Fukami, B. Kuerbanjiang, H. Sato, F. Matsukura, V. K. Lazarov, and H. Ohno,
"Universality classes for domain wall creep motion in magnetic metal Ta/CoFeB/MgO",
14th RIEC International Workshop on SPINTRONICS, Tohoku University, Japan, November 18, 2016.
46 K. Watanabe, S. Fukami, H. Sato, F. Matsukura, and H. Ohno,
"Effect of Buffer Layer Material and its Crystal Structure on Magnetic Properties of CoFeB/MgO Stacks",
14th RIEC International Workshop on SPINTRONICS, Tohoku University, Japan, November 18, 2016.
45 C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno,
"Spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO -Effect of sputtering condition of W",
14th RIEC International Workshop on SPINTRONICS, Tohoku Tohoku University, Japan, November 18, 2016.
44 A. Kurenkv, C. Zhang, S. DuttaGupta, S. Fukami, and H. Ohno,
"Spin-orbit torque induced switching of antiferromagnet-ferromagnet dots with various sizes",
14th RIEC International Workshop on SPINTRONICS, Tohoku University, Japan, November 18, 2016.
43 M. Bersweiler, K. Watanabe, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"Interfacial anisotropy and Gilbert damping in MgO/Fe/Fe-V/Fe/MgO structure",
14th RIEC International Workshop on SPINTRONICS, Tohoku University, Japan, November 18, 2016.
42 S. Ishikawa, Eli C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"Current induced magnetization switching of magnetic tunnel junctions with Co-based recording layers",
14th RIEC International Workshop on SPINTRONICS, Tohoku University, November 18, 2016.
41 M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno,
"Homodyne-detected ferromagnetic resonance spectra of CoFeB with perpendicular easy axis under perpendicular magnetic fields",
14th RIEC International Workshop on SPINTRONICS, Tohoku University, Japan, November 18, 2016.
40 K. Satomi and T. Oya,
"Design of Slime-mold-inspired Multi-layered Single-electron-circuit",
29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, Japan, November 10, 2016.
39 T. Tanabe and T. Oya,
"Study of Single-electron Information-processing Circuit Mimicking Foraging Behavior of Honeybee Swarm",
29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, Japan, November 10, 2016.
38 M. Takano and T. Oya,
"Study of performance improvement of single-electron associative memory circuit",
Applied Nanotechnology and Nanoscience International Conference (ANNIC 2016), Barcelona, Spain, November 08, 2016.
37 D. Kato, M. Oogane, K. Fujiwara, Y. Arai, J. Jono, H. Naganuma, M. Tsuchida, and Y. Ando,
"Magnetic Field Sensor Performance in Magnetic Tunnel Junctions with Amorphous Electrode for Bio-magentic Field",
61st Annual Conference on Magnetism and Magnetic Materials (MMM2016), New Orleans, USA, November 03, 2016.
36 D. Suzuki and T. Hanyu,
"A Self-Terminated One-Phase Write Driver for Complementary-MTJ Based Memory Cells",
61st Annual Conference on Magnetism and Magnetic Materials (MMM2016), New Orleans, USA, November 03, 2016.
35 H. Honjo, S. Ikeda, H. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, and T. Endoh,
"Origin of variation of shift field via annealing at 400℃ in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer",
61st Annual Conference on Magnetism and Magnetic Materials (MMM2016), New Orleans, USA, November 01, 2016.
34 K. Itoh, M. Muraguchi and T. Endoh,
"High Accurate and Low Loss Current Sensing Method with Novel Current Path Narrowing Method for DC-DC Converters and its Demonstration",
2016 International Telecommunication Energy Conference (INTELEC 2016), Austin, TX, USA, October 26, 2016.
33 K. Shingo, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, and K. Shiraishi,
"First Principles Study on the Strain Dependence of Thermal Oxidation and Hydrogen Annealing Effect at Si/SiO2 Interface in V­Mosfet",
Electrochemical Society PRiME 2016, Hawaii, USA, October 5, 2016.
32 C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno,
"Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO dots",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
31 D. Suzuki and T. Hanyu,
"Design of an MTJ-based nonvolatile flip-flop with high-sensitive self-terminated writing for a nonvolatile microcontroller unit",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
30 H. Ohno, T. Endoh, T. Hanyu, and S. Ikeda,
"Overview of spintronic integrated circuit project",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
29 H. Sato, S. Fukami, S. Ikeda, and H. Ohno,
"Two- and three-terminal devices for spintronics based integrated circuits",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
28 M. Bersweiler, K. Watanabe, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"Magnetic properties of MgO/FeV/MgO and MgO/Fe/FeV/Fe/MgO structures for spintronics integrated circuits",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
27 M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu,
"Design of an MTJ-based nonvolatile LSI for energy-efficient microcontroller unit",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
26 Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh,
"A 600-μW ultra-low-power associative processor based on MTJ nonvolatile memories with autonomic intelligent power-gating scheme",
The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016.
25 D. Suzuki and T. Hanyu,
"A Self-Terminated Energy-Efficient Nonvolatile Flip-Flop Using 3-terminal Magnetic Tunnel Junction Device",
2016 International Conference on Solid State Devices and Materials(SSDM2016), Tsukuba, Japan, September 28, 2016.
24 J. Igarashi, E. C. I. Enobio, J. Llandro, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"Magnetic Field Angle Dependence of Switching Field in CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Easy Axis at Low Temperature",
2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 28, 2016.
23 K. Itoh, M. Muraguchi and T. Endoh,
"Novel Integrated Voltage Regulators with High-Side NMOS Power Switch and Dedicated Bootstrap Driver Using Vertical MOSFET for Efficiency Enhancement",
2016 International Conference on Solid State Devices and Materials(SSDM2016), Tsukuba, Japan, September 28, 2016.
22 S. Ohuchida, K. Ito, M. Muraguchi and T. Endoh,
"New Model of Switching Delay Induced by Modulation Effect of Damping and STT Pumping Balance With Programing Current and Interference Phenomena in P-MTJ Array",
2016 International Conference on Solid State Devices and Materials(SSDM2016), Tsukuba, Japan, September 28, 2016.
21 M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu,
"Highly Reliable MTJ-Based Nonvolatile Logic-in-Memory LSI with Dynamic Write Error Masking Scheme",
2016 International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 27, 2016.
20 Y. Ma, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh,
"A Compact and Ultra-Low-Power STT-MRAM-Based Associative Memory for Nearest Neighbor Search with Full Adaptivity of Template Data Format Employing Current-Mode Similarity Evaluation and Time-Domain Minimum Searching",
2016 International Conference on Solid State Devices and Materials(SSDM2016), Tsukuba, Japan, September 27, 2016.
19 C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno,
"Sputtering condition dependence of spin-orbit torque induced magnetization switching in W/CoFeB/MgO",
8th Joint European Magnetic Symposia (JEMS2016), Glasgow, UK, August 22, 2016.
18 A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, H. Ohno,
"Field-free switching of antiferromagnet/ferromagnet dots by spin-orbit torque",
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9), Kobe, Japan, August 9, 2016.
17 M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno,
"Damping constant of free layer in nanoscale magnetic tunnel junctionthrough domain structures",
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9), Kobe, Japan, August 8, 2016.
16 M. Bersweiler, K. Watanabe, E. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"High interfacial anisotropy and low Gilbert damping in MgO/Fe/Fe-V/Fe/MgO structure",
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids (PASPS9), Kobe, Japan, August 8, 2016.
15 T. Endoh,
“Overview of JSPS-EPSRC core-to-core project”,
JSPS Core-to-Core Kickoff Seminar, University of Cambridge, England, July 18,2016.
14 T. Endoh,
“Spintronics research on LSI”,
JSPS Core-to-Core Kickoff Seminar, University of Cambridge, England, July 18,2016.
13 M. Niwa,
“Physical Analysis of spintronics devices”,
JSPS Core-to-Core Kickoff Seminar, University of Cambridge, England, July 18,2016.
12 K. Ito,
“Spintronics device research based on LLG simulation”,
JSPS Core-to-Core Kickoff Seminar, University of Cambridge, England, July 18,2016.
11 K. Itoh, M. Muraguchi and T. Endoh,
“Novel inductor current to digital converter and its concept evaluation”,
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Hakodate, Japan, July 5, 2016.
10 Y. Ma, T. Endoh,
"Effect of MTJ Resistance Fluctuations on Synapse Stability of MTJ-Based Nonvolatile Neuron Circuit for High-Speed Object Recognition",
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Hakodate, Japan, July 5, 2016.
9 T. Nakano, M. Oogane, T. Furuichi, K. Ao, and Y. Ando
"Wide-dynamic-range magnetic sensor based on magnetic tunnel junction with perpen-dicularly magnetized [Co/Pd]-based reference layer"
3rd Workshop of the Core-to-Core Project, Germany, June 22, 2016.
8 D. Kato, M. Oogane, K. Fujiwara, Y. Arai, J. Jono, H. Naganuma, M. Tsuchida, and Y. Ando
"Magnetic Field Sensor Properties in Magnetic Tunnel Junctions with Amorphous CoFeSiB at Low Magnetic Field" 3rd Workshop of the Core-to-Core Project, Germany, June 22, 2016.
7 M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno
"Evaluation of damping constant in a nanoscale magnetic tunnel junction by homodyne-detected ferromagnetic resonance"
3rd Workshop of the Core-to-Core Project Tohoku-York-Kaiserslautern New concepts for future spintronic devices, Kaiserslautern, Germany, June 22, 2016.
6 S. Fukami, T. Anekawa, A. Ohkawara, C. Zhang, and H. Ohno
"A sub-ns three-terminal spin-orbit torque induced switching device"
2016 Symposium on VLSI Technology, Hawaii, USA, June14, 2016.
5 D. Suzuki and T. Hanyu
"Energy-Efficient and Highly-Reliable Nonvolatile FPGA Using Self-Terminated Power-Gating Scheme"
IEEE International Symposium on Multiple-Valued Logic (ISMVL 2016), Sapporo, Japan, May 18, 2016.
4 Y. Tabata, D. Suzuki, and T. Hanyu
"Design Automation of a Power-Aware Nonvolatile FPGA"
25th International Workshop on Post-Binary ULSI Systems, Sapporo, Japan, May 17, 2016.
3 W.Kawai, R. Ueno, N. Homma, T. Aoki, K. Fukushima, and S. Kiyomoto
"Side channel Security Evaluation for KCipher‐2 Software on Smart Cards"
25th International Workshop on Post-Binary ULSI Systems, Sapporo, Japan, May 17, 2016.
2 H. Koike, S. Miura, H. Honjo, T. Watanabe, H. Sato, S. Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, M. Muraguchi, M. Niwa, K. Ito, S. Ikeda, H. Ohno, T. Endoh
"Demonstration of yield improvement for on-via MTJ using a 2-Mbit 1T-1MTJ STT-MRAM test chip"
8th International Memory Workshop, Paris, France, May 16, 2016.
1 T. Shinada, Y. Ohshima, T. Endoh
"International industry-academic consortium (CIES consortium) enhances creation of innovative integrated electronic technologies from material/process/LSI to sofware/tool/system"
International Nanotechnology Conference , Leuven, Belgium , May 10, 2016.