Publications
FY 2018
Conferences
Invited talks at international conference
| 52 | K. Nagashio, "Interface engineering for 2D layered semiconductors", 2019 International Symposium on VLSI Technology, Systems and Applications (2019 VLSI-TSA), Taiwan, 2019/3/22. |
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| 51 | J. Robertson, "Fermi level pinning and Semiconductor Interfaces and the Contact Resistance problem", International Workshop on Materials Science and Device Physics, The university of Tokyo, Tokyo, Japan, 2019/3/19. |
| 50 | H. Ohno, "Spintronics Nanodevices", City University Distinguished Lecture Series, Hong Kong, 2019/3/15 |
| 49 | M. Niwa, K. Kimura, and T. Endoh, "Magnetic Tunnel Junction for STT-MRAM - Structural analysis and Interface control", World Congress of Smart Materials (WCSM), 2019, Rome, Italy, 2019/3/8 |
| 48 | S. Fukami, "Spintronic Devices for Neural Networks", APS March Meeting 2019, Boston, USA, 2019/3/6 |
| 47 | S. Fukami, and H. Ohno, "Spin orbitronics for high-speed memory and artificial neural network", 2nd Tohoku/SG-SPIN Workshop in Spintronics, Singapore, 2019/2/22 |
| 46 | K. Watanabe, B. Jinnai, S. Fukami, H. Sato, and H. Ohno, "1X and X nm Perpendicular-easy-axis Magnetic Tunnel Junctions utilizing Shape Anisotropy", The 2nd Symposium for World Leading Research Centers, Sendai, Japan, 2019/2/17 |
| 45 | M. Shinozaki, J. Igarashi, J. Llandro*, H. Sato, S. Fukami, and H. Ohno, "Size Dependence of the Influence of Edge Effects in Nanoscale Perpendicular-Anisotropy Magnetic Tunnel Junctions", The 2nd Symposium for World Leading Research Centers, Sendai, Japan, 2019/2/17 |
| 44 | H. Sato, and T. Endoh, "Development of Integration process for 128Mb-density embedded STT-MRAM with both high thermal stability factor and endurance", The 2nd Symposium for World Leading Research Centers, Sendai, Japan, 2019/2/16 |
| 43 | Y. Ando, "Recent progress of bio-magnetic field sensors with magnetic tunnel junctions", International School on Spintronics and Korea-Japan Spintronics Workshop, Nagoya, 2019/1/21 |
| 42 | S. Fukami, and H. Ohno, "Spin-Orbit Torque Switching in Nanoscale Devices: Material and Device Engineering", 16th RIEC International Workshop on Spintronics & 8th JSPS Core-to-Core Workshop on "New-Concept Spintronic Devices", Sendai, Japan, 2019/1/10 |
| 41 | T. Hanyu, ”Challenge of an MTJ-Based Non-Volatile Logic LSI for Internet-of-Things Application”, Workshop on Next Generation Computing System, HongKong, 2018/12/1 |
| 40 | K. Nagashio, "Electrically Inert Interface in 2D Heterostructure FETs", Workshop on innovative nanoscale devices and systems (WINDS2018), The Westin Hapuna Beach Resort, Kohala, Hawaii, USA, 2018/11/28. |
| 39 | H. Ohno, "Spintronics Nanodevices", ACSIN-14 & ICSPM26, Sendai, Japan, 2018/10/24 |
| 38 | S. Hofmanm, "Crystal Growth of 2D Materials: From Model Systems to Integrated Manufacturing", 65th Annual AVS International Symposium, Long Beach, CA, USA, 2018/10/22. |
| 37 | T. Endoh, " Impact of STT-MRAM and MTJ/CMOS Hybrid NV-Logic - from NV-MPU to NV-AI Chip -", Non-Volatile Memory Technology Symposium 2018 (NVMTS2018), Sendai, Japan, 2018/10/22 |
| 36 | R. Tamura, I. Mori, N. Watanabe, H. Koike, and T. Endoh, "Accurate error bit mode analysis of STT-MRAM chip with a novel current measurement module implemented to gigabit class memory test system", Non-Volatile Memory Technology Symposium 2018 (NVMTS2018), Sendai, Japan, 2018/10/22 |
| 35 | T. Hanyu, "Design of an MTJ-Based Nonvolatile Logic LSI and Its Application", Non-Volatile Memory Technology Symposium 2018 (NVMTS2018), Sendai, Japan, 2018/10/22 |
| 34 | S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno, "Associative memory operation using analog spin-orbit torque device ", SPICE Workshop - Spintronics meets Neuromorphics, Mainz, Germany, 2018/10/10 |
| 33 | T. Endoh, "Ultra-Low Power Brain-Inspired Processors and Neuromorphic Processors using MTJ based Memories", SPICE Workshop "Spintronics meets Neuromorphics", Mainz, Germany, 2018/10/8 |
| 32 | C. Zhang, Y. Takeuchi, S. Fukami, and H. Ohno, "Spin-orbit torque switching in nanoscale devices – physics and material engineering", KITS Workshop 2018Collective Spin Dynamics in Nanostructures, Beijing, China, 2018/10/8 |
| 31 | S. Hofmanm, P. Periwal, F. Panciera, F. M. Ross, "Group IV nanowires as model systems to explore phase behaviour, nucleation and interface dynamics in nanoscale systems", 2018 International Conference on Solid State Devices and Materials (SSDM2018), Tokyo, Japan, 2018/9/12. |
| 30 | M. Oogane, "Tunnel magneto-resistance effect in magnetic tunnel junctions- focusing on Science -", 2018 International Conference on Solid State Devices and Materials (SSDM2018), Tokyo, 2018/9/12 |
| 29 | T. Hanyu, "Prospects of Nonvolatile Logic LSI Using MTJ/MOS-Hybrid Circuitry and Its Application", 2018 International Conference on Solid State Devices and Materials (SSDM2018), Tokyo, 2018/9/12 |
| 28 | T. Endoh, and Y. Ma, "Ultralow-Power and Compact Nonvolatile Brain-Inspired VLSIS Based on CMOS/MTJ Hybrid Technology", 2018 International Conference on Solid State Devices and Materials (SSDM2018), Tokyo, 2018/9/11 |
| 27 | S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno、 ”Analog spintronics device for artificial neural networks”, The 2018 International Symposium on Nonlinear Theory and Its Applications (NOLTA2018), Tarragona, Spain, 2018/9/6 |
| 26 | T. Endoh, "eMRAM technology trend and its Application", Samsung Foundry Forum 2018, Tokyo, Japan, 2018/9/4 |
| 25 | T. Hanyu, T. Endoh, D. Suzuki, M. Natsui, and H. Ohno, "Impact of an MTJ-based logic LSI and its possibility", NVMSA2018, Hakodate, 2018/8/29 |
| 24 | T. Endoh, "An Overview of STT-MRAM and CMOS/MTJ Hybrid NV-Logic such as NV-MPU/MCU", NVMSA2018, Hakodate, 2018/8/29 |
| 23 | W. A. Borders, S. Fukami, and H. Ohno, "Antiferromagnet/Ferromagnet Based Spin-Orbit Torque Devices for Hopfield Network Applications", Explorative Workshop: Spintronic Perspectives on Neuromorphic Computing, Jülich, Germany, 2018/8/13 |
| 22 | S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno, "Neuromorphic computing with analog spin orbit torque device", 10th International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS10), Linz, Austria, 2018/8/7 |
| 21 | T. Endoh, "MRAM (New Memory Technologies Track)", Flash Memory Summit, Santa Clara, USA, 2018/8/7 |
| 20 | T. Endoh, "MRAM in 2024 and How We Got There", MRAM Developer Day 2018, Santa Clara, USA, 2018/8/6 |
| 19 | H. Ohno, "Opening - from PASPS-1 to PASPS-10", 10th International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS10), Linz, Austria, 2018/8/6 |
| 18 | S. Fukami, C. Zhang, Y. Takeuchi, Y. Takahashi, B. Jinnai, and H. Ohno、 "SPIN-ORBIT TORQUE INDUCED MAGNETIZATION SWITCHING FOR HIGH-SPEED NONVOLATILE MEMORIES", 23rd International Colloquium on Magnetic Films and Surfaces (ICMFS-2018), Santa Cruz, USA, 2018/7/27 |
| 17 | S. DuttaGupta, R. Itoh, S. Fukami, and H. Ohno, "Angular dependence of magnetoresistance in nonmagnet/antiferromagnet bilayer structure", Tohoku-Tsinghua Joint Workshop on Materials and Spintronics Sciences, Sendai, Japan, 2018/7/26 |
| 16 | S. Fukami, "Neuromorphic computing by artificial neural network with analog spin-orbit torque device", The 21st International Conference on Magnetism (ICM2018), San Francisco, USA, 2018/7/17 |
| 15 | S. Hofmanm, "Integrated Chemical Vapour Deposition of Layered 2D Materials for Scalable Device Manufacturing", UK Semiconductors conference 2018, Sheffield, UK, 2018/7/5. |
| 14 | K. Nagashio, "Electrically inert interface in 2D heterostructure FETs", AWAD2018, Kitakyusyu, Japan, 2018/7/3. |
| 13 | S. Hofmanm, "Integrated Chemical Vapour Deposition of 2D Materials for Scalable Device Manufacturing", GRAPHENE 2018, Dresden, Germany, 2018/6/27. |
| 12 | S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno, "Neuromorphic computing with analogue spin-orbit torque devices", Workshop on Spintronics and Nanomagnetism for Neuromorphic Computing, Leeds, UK, 2018/6/27 |
| 11 | H. Sato, K. Watanabe, B. Jinnai, S. Fukami, H. Honjo, S. Ikeda, T. Endoh, and H. Ohno, "High-performance perpendicular-anisotropy (Co)FeB/MgO-based magnetic tunnel junctions and challenges for their scaling down to single-digit nanometer", 2018 Spintronics Workshop on LSI, Hawaii, USA, 2018/6/17 |
| 10 | S. Fukami, W. A. Borders, A. Kurenkov, C. Zhang, S. DuttaGupta, and H. Ohno, "Spintronic analog memory for neuromorphic computing", CIMTEC 2018 - 8th Forum on new materials, Perugia, Italy, 2018/6/12 |
| 9 | T. Endoh, "Development of an Innovative IoT & AI chip for future IoT/Automatic Operation system", 2018 Conference of Miyagi Prefectural Government, Sendai, Japan, 2018/6/7 |
| 8 | S. Fukami, and H. Ohno, "Spin-orbit torque switching and its applications –from high-speed memory to artificial neural network–", The 5th International Conference of Asian Union of Magnetics Societies (IcAUMS 2018), Jeju, Korea, 2018/6/5 |
| 7 | T. Endoh, "STT-MRAM and its Application: NV-Logic from NV-MPU/MCU to NV-AI VLSIs", ISCAS 2018, Italy, 2018/5/30 |
| 6 | S. Fukami, and H. Ohno, "Potential and challenges of nonvolatile spintronics devices for integrated circuits applications", 7th Workshop of the Core-to-Core Project Tohoku - York - Kaiserslautern, Kaiserslautern, Germany, 2018/5/28 |
| 5 | T. Endoh, "Impact of nonvolatile brain-inspired VLSIs with CMOS/MTJ hybrid technology", ET CMOS 2018, Canada, 2018/5/9 |
| 4 | T. Endoh, "Etch Process Technology for High Density STT-MRAM", INTERMAG 2018, Singapore, 2018/4/27 |
| 3 | S. Fukami and H. Ohno, "Nonvolatile memory devices with magnetic nanowires controlled by spin-transfer and spin-orbit torques", INTERMAG 2018, Singapore, 2018/4/27 |
| 2 | H. Ohno, "Spintronics Nanodevices", INTERMAG 2018, Singapore, 2018/4/25 |
| 1 | S. Ikeda, and T. Endoh, "Material research for high performance of CoFeB-MgO Magnetic Tunnel Junctions for Nonvolatile VLSI", 2018 MRS Spring Meeting, Phoenix, USA, 2018/4/4 |