Public Information

Awards, Press, etc.

FY 2019

Books

1	T. Hanyu, T. Endoh, Y. Ando, S. Ikeda, S. Fukami, H. Sato, H. Koike, Y. Ma, D. Suzuki, H. Ohno, "Advances in Non-volatile Memory and Storage Technology 2nd Edition - Chapter 7: Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology", Elsevier, 2019/6/18.